کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543848 | 871689 | 2008 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of irregular increase in sheet resistance of Ni silicides on transition from NiSi to NiSi2
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The annealing conditions causing an irregular peak in sheet resistance of nickel silicides are investigated. It is found that the irregular rise in sheet resistance occurs at a critical temperature of 750–775 °C as a result of agglomeration related to phase transition from NiSi to NiSi2. Experiments on the effect of temperature, heating rate and annealing duration in rapid thermal annealing revealed that the high-resistance state produced by annealing at the critical temperature could not be changed by subsequent annealing at higher temperature, and that the high-resistance state required 30–40 s at the critical temperature to form. Pre-annealing at 600 °C was found to suppress the later formation of the high-resistance state.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 315–319
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 315–319
نویسندگان
Kazuo Tsutsui, Ruifei Xiang, Koji Nagahiro, Takashi Shiozawa, Parhat Ahmet, Yasutoshi Okuno, Michikazu Matsumoto, Masafumi Kubota, Kuniyuki Kakushima, Hiroshi Iwai,