کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543849 871689 2008 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Preparation of conductive HfN by post rapid thermal annealing-assisted MOCVD and its application to metal gate electrode
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Preparation of conductive HfN by post rapid thermal annealing-assisted MOCVD and its application to metal gate electrode
چکیده انگلیسی

Conductive hafnium nitride (HfN) with negligible carbon impurity (<0.1 at.%) was chemically synthesized for the first time by post-rapid thermal annealing (PRTA)-assisted metal organic chemical vapor deposition (MOCVD) method. The thermodynamic instability of N-rich hafnium nitride (Hf3N4) phase, which is considered to be the dominant phase in CVD deposition of hafnium nitride, was utilized for pure and metallic HfN synthesis. By integrating the PRTA-HfN film into MOS capacitor, the electrical properties of the PRTA-HfN film as metal gate electrode were studied. Well behaved electrical characteristics such as about 4.9 eV of effective work function, low leakage current and large reduction in SiO2 equivalent oxide thickness (EOT), which was attributed to the combination of physical thinning of SiO2 and formation of high-κ interfacial layer, suggest the potential capability of PRTA-assisted MOCVD in chemically synthesizing HfN metal gate electrode for pMOS devices application.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 320–326
نویسندگان
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