کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
543859 | 871689 | 2008 | 6 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Characterization of sputtered tungsten nitride film and its application to Cu electroless plating Characterization of sputtered tungsten nitride film and its application to Cu electroless plating](/preview/png/543859.png)
In this study, W and tungsten nitride films were fabricated by reactive sputtering in a N2/Ar atmosphere, the native oxide growth on the surface of the tungsten nitride films was investigated by X-ray photoelectron spectroscopy (XPS). It was found that tungsten nitride films were the mixture of W and W2N sputtered in atmospheres of 3 mTorr argon and at the N2 partial pressure from 0.1 to 2.0 mTorr. The ratio of W and W2N in films was changed with the nitrogen partial pressure in sputtered chamber. Surface oxidations of the W film and tungsten nitride films advanced with time. Electrochemical measurement shows that all reduction–oxidation (redox) potentials of tungsten and tungsten nitrides were lower than that of copper film in electroless copper solution. And so, electroless-plated copper could be deposited on the surface of tungsten nitride films when the substrates were immersed into electroless copper plating solution without any pretreatment. Tungsten nitride films are appropriate for ULSI Cu interconnections using electroless Cu deposition.
Journal: Microelectronic Engineering - Volume 85, Issue 2, February 2008, Pages 395–400