Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN

In this paper we show an experimental procedure to measure channel carrier mobility in technologically relevant MOSFET devices, featuring metal gate on high-k gates, with very large leakage values and channel lengths down to 77 nm. This is achieved by means of a novel split-RFCV technique, which is able to perform carrier separation in the range from MHz to GHz. This technique enables an accurate determination of both metallurgical length and device parasitics. Using these measurements together with conventional gDS characterization, Rseries can be obtained, and thus a mobility band for short channel devices is obtained.