HCI degradation model based on the diffusion equation including the MVHR model

This paper presents an improvement of the R-D model explaining analytically the 0.5 exponent observed during HCI stress. An original model based on diffusion equation is proposed where the balance between the hot-hole-induced generation of dangling bonds and the passivation mechanisms via a Multi-Vibrational Hydrogen Release is enlightened. The second and smaller slope observed is explained and modelled with the hot spot displacement along the Si-SiO2 interface.