کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
543914 1450397 2007 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Hot-carrier damage from high to low voltage using the energy-driven framework
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Hot-carrier damage from high to low voltage using the energy-driven framework
چکیده انگلیسی

In this work, we confirm that the energy is the driving force of Hot Carrier effects. When the energy is high, the Energy-driven framework allows to retrieve Lucky Electron Model-like equations. But when the energy is lowered, high energy electrons generated by Electron-Electron Scattering become the dominant contribution to the degradation. For even lower energy Multiple Vibrational Excitation mechanism starts taking the lead.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issues 9–10, September–October 2007, Pages 1938-1942