Interrelationship between electrical and physical properties of subcritical Si-Ge layers grown directly on silicon for short channel high-performance pMOSFETs

The influence of substrate heterostructure (Si/ SiGe/ Si) on performance of MOSFETs with high-k/metal gate stacks has been studied. In particular, the effects of the channel thickness on the performance and short channel properties are evaluated. It is found that these heterostructures, when designed optimally, can not only exhibit high mobility but also excellent control of short channel effects down to 70 nm gate length.