Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements

The electrically active defects in high-k/SiO2 dielectric stacks are examined using a combination of low frequency noise (LFN) and charge pumping (CP) methods. The volume trap profile in the stacks is obtained by modeling the drain current noise spectra and charge pumping currents, with each technique covering a different depth range. The LFN is dependent on both the high-k and interfacial (IL) SiO2 thicknesses while the CP current is mainly dependent on the IL thickness.