کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544058 871703 2006 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Evaluation of graded-channel SOI MOSFET operation at high temperatures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Evaluation of graded-channel SOI MOSFET operation at high temperatures
چکیده انگلیسی

This paper presents a comparative analysis between graded-channel (GC) and conventional fully depleted SOI MOSFETs devices operating at high temperatures (up to 300 °C). The electrical characteristics such as threshold voltage and subthreshold slope were obtained experimentally and by two-dimensional numerical simulations. The results indicated that GC transistors present nearly the same behavior as the conventional SOI MOSFET devices with similar channel length. Experimental analysis of the gm/IDS ratio and Early voltage demonstrated that in GC devices the low-frequency open-loop gain is significantly improved in comparison to conventional SOI devices at room and at high-temperature due to the Early voltage increase. The multiplication factor and parasitic bipolar transistor gain obtained by two-dimensional numerical simulations allowed the analysis of the breakdown voltage, which was demonstrated to be improved in the GC as compared to conventional SOI transistors in thin silicon layer devices in the whole temperature range under analysis.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Journal - Volume 37, Issue 7, July 2006, Pages 601–607
نویسندگان
, , ,