Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

The dc behavior of single-gate and double-gate MOSFETs with gate lengths ranging from 5 to 100 nm is simulated using drift-diffusion, hydrodynamic, and Monte Carlo approaches. It is shown that by simple adjustments of the drift-diffusion and hydrodynamic transport model parameters the Monte Carlo currents can be reproduced in the entire gate length range. The suitability of the different simulation methods for the simulation of nanometer MOSFETs is briefly discussed.