Fin shape dependent variability for strained SOI FinFETs

• All the corrections suggested by reviewers incorporated with proper references in modified manuscript.
• High driving current with strained channel but leakage is a problem.
• OFF current can be reduced by change in fin shapes.
• Rectangular and triangular fin shapes in FinFET are compared in terms of performance and process variation.
• Triangular FinFET performance for low power applications is better under the influence of fin width and work function variations.

In this paper, for the first time impact of fin shape variation on 22-nm technology node strained silicon-on-insulator (SSOI) n-FinFET has been examined. With 3D-TCAD simulator, the electrical characteristics are analyzed and compared for devices with fin shapes, rectangular and triangular. Here, strained technique improved the driving current and reduction in leakage current is done through use of triangular fin shape devices. For the same bottom width, triangular FinFETs improved OFF current ~ 2–2.5 ×. Moreover, the device characteristics variability has been considered through variations in fin width and work function (WF). It observed that triangular FinFETs with lightly doped fins are more susceptible for short channel effects. Due to low leakage current triangular FinFETs can maintain suitable ON to OFF ratio under the circumstance of work function and fin width variation.

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