Monolithic 3D TSV-based high-voltage, high-temperature capacitors

• Implementation of 3D capacitors operating at high-voltages in CMOS grade silicon.
• Realization of highly-integrated capacitors exploiting TSV-based technology.
• Verification of suitability of capacitors in sensitive circuits to operate at high temperatures.

In this work, high-voltage monolithic 3D capacitors operating at 100 V (6 MV/cm) are fabricated by the use of a through silicon-via-based technology. Electric characteristics of the monolithic 3D capacitors exhibit a capacitance density of 17 times larger than that of the planar capacitors with an equal contact area and identical dielectric thicknesses. The impact of the 3D architecture of capacitors on their electrical properties is studied for various patterns and geometries. TSV-based capacitors with a hexagonal arrangement of the holes and 20 μm hole diameters exhibit a capacitance deviation of 0.8% at 150 °C in accumulation, justifying the capability of TSV-based capacitors to operate even at high-temperatures. Furthermore, a high dielectric-breakdown voltage of 280 V (18 MV/cm) was realized using a thick hybrid dielectric stack of SiO2/Si3N4.

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