Nanoimprint assisted inkjet printing to fabricate sub-micron channel organic field effect transistors

Solution processed poly(3-hexylthiophene) organic field effect transistors with channel lengths down to 750 nm were fabricated by nanoimprint assisted inkjet printing. The nanoimprint lithography was used to define sub-micron channels into a resist because of its high resolution. A silver-containing ink was inkjet-printed onto a pre-patterned resist layer to form a metallic film, which acts as source and drain electrodes after lift-off. This process replaces the expensive vacuum evaporation of gold electrodes. The transistor short channel effect was suppressed successfully by constant field downscaling. However, samples with inkjet-printed silver electrodes have limited current density. They also have lower effective charge mobility due to higher charge injection barrier, as well as the rough metal surface. Gold nanoparticles were added into the silver ink to modify its work function and therefore reduce the contact resistance between electrodes and polymer. This emphasizes the importance of the metal-semiconductor contact especially for short channel organic transistors.

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► The IJP resolution was enhanced to 750 nm with NIL pre-patterning.
► Short channel effect of OFETs was investigated and suppressed.
► IJP Ag electrodes were applied to replace the expensive vacuum evaporation.
► Improve of the contact via gold nanoparticles in the ink.