Tailored etching processes for UV-NIL resist material for Si-antireflective surfaces

In this contribution the development of a tailored two step etching process dedicated for the fabrication of tapered nanostructures that feature strong antireflective properties on silicon, especially in the wavelength regime used for energy harvesting in silicon solar cells (300 nm–1100 nm), is described. The etch mask was fabricated by large area UV-nanoimprint lithography. The etching process was optimized to realize a tailored gradual index contrast surface texture. Measurement results of the optical performance of the antireflective surfaces are given as proof of concept.

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