Fabrication and characterization of sub-500 nm channel organic field effect transistor using UV nanoimprint lithography with cheap Si-mold

P-type poly (3-hexylthiophene) (P3HT) organic field effect transistors (OFETs) with channel length down to 500 nm were fabricated. The gold source and drain electrodes were patterned using UV-based nanoimprint lithography and a lift-off process. To reduce mold costs, an opaque silicon nanoimprint-mold was used instead of expensive quartz molds for UV-nanoimprint. This new technique, called non-transparent UV-nanoimprint lithography, can be applied due to the impact of indirectly propagating light. Finally, the electrical performance of OFETs was tested. However, the OFETs with short channels show inhibited saturation ability and a weak gate control. The reasons for this short channel effect were discussed.

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► Sub-500 nm channel organic transistors (OFETs) were fabricated using UV-nanoimprint with cheap Si-mold.
► Low-cost, solution based and printable organic semiconductor (P3HT) was spin coated.
► The compromise between high performances and low-cost was achieved.
► By short channel OFETs, the inhibited ability getting into saturation regime and the weaker gate control have been observed.
► The contact resistance and the gate insulator thickness are the key factors for this effect.