Scanning probe nanolithography on calixarene

The direct patterning of molecular resist materials using scanning probes as local nano-toolbox represents an interesting alternative to radiation-based lithography circumventing proximity effects and development-related problems. Here, we demonstrate the development-less patterning of 10–40 nm thick, spin-coated C-Methylcalix[4]resorcinarene molecular resist in a positive-tone. The lithography was performed with a modified STM operated in constant-current Fowler–Nordheim regime at ambient conditions. Thereby, wide process latitude from sub-10 nm up to the μm-size was achieved by variation of the line dose and bias voltage. The reproducible and reliable tip-based patterning of calixarene has also been demonstrated on Silicon substrates with low electron line dose values of 10 nC/cm corresponding to 40 pA set-point and 40 μm/s tip speed.

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► Tip-based nanolithography of calixarene molecular resist.
► Modified STM operated in Fowler–Nordheim regime at ambient conditions.
► Positive-tone, development-less resist behavior of C-Methylcalix[4]resorcinarene.
► Coverage of a wide feature size range from sub-10 nm up to μm.
► Feature size primarily determined by line dose, bias voltage and tip shape.