کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544383 1450384 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
TiN scanning probes for electrical profiling of nanoelectronics device structures
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
TiN scanning probes for electrical profiling of nanoelectronics device structures
چکیده انگلیسی

Electrical atomic force microscopy (AFM) methods require highly conductive tips with nanometer-scale spatial resolution. Si tips with metal (e.g. PtIr) and doped-diamond coatings are most commonly used. Metal coatings are however prone to rapid wear and diamond coatings are limited in conductivity and spatial resolution. Therefore, we have developed solid TiN tips with a pyramidal shape made by molding using anisotropic Si etching for defining an inverted pyramid and TiN sputtering for mold filling. The TiN tips are attached to Ni electroplated cantilevers. The probes are removed from the substrate using a dedicated peel-off step. The fabrication process is based on state-of-the-art 200-mm Si wafer technology. Probe evaluation in AFM shows a typical spatial resolution of about 8–15 nm for these TiN tips. Using the hard TiN tips in scanning spreading resistance microscopy (SSRM) we demonstrate two-dimensional measurements of Ge doping staircase structures which could so far only be measured by doped diamond tips. Further measurements of carbon nanotube (CNT) interconnects and high-k metal gate stacks by conductive AFM (c-AFM) illustrate the potential of the TiN tips. This paper describes the probe concept, fabrication and evaluation in AFM.

Figure optionsDownload as PowerPoint slideHighlights
► We describe pyramidal TiN tips integrated into Ni cantilevers for electrical AFM.
► The probes are made by common 200-mm silicon wafer technology.
► The TiN tips withstand the high pressures (GPa range) needed for SSRM of Ge.
► SSRM of CNT interconnects and c-AFM of a high-k material is possible by TiN tips.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 97, September 2012, Pages 255–258
نویسندگان
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