کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544435 1450388 2012 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Study of surface morphology and refractive index of dielectric and metallic films used for the fabrication of monolithically integrated surface plasmon resonance biosensing devices
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Study of surface morphology and refractive index of dielectric and metallic films used for the fabrication of monolithically integrated surface plasmon resonance biosensing devices
چکیده انگلیسی

Integration in a single chip using localized optical phenomena is one of the possible approaches to attain the accuracy, portability and affordability required for future biosensing devices. We address this problem by investigating a grating-coupled quantum well (QW) surface plasmon resonance (SPR) device that comprises a monolithically integrated source of light and a bio-sensitive surface. The successful operation of such a device requires, in addition to the optimization of its architecture, the use of high quality thin films with smooth surface morphology. Here, we present the results of studying a variety of dielectric and Au films intended for the fabrication of QW-SPR devices. For dielectrics, we found that SiO2 films obtained by plasma-enhanced chemical vapor deposition have the best surface morphology and optical properties appropriate for our device. The films of Au fabricated with deposition rates exceeding 0.3 nm/s exhibited relatively smooth surface morphology, however the presence of surface micro-inclusions reduced the attractiveness of such films. To avoid sample overheating that occurs at extremely slow deposition rates, we optimized the fabrication of Au films at 0.05 and 0.2 nm/s.

Figure optionsDownload as PowerPoint slideHighlights
► We have investigated fabrication of monolithically integrated SPR biosensing devices.
► PECVD offers SiO2 films of superior optical properties.
► The Au films by e-beam at deposition rates not exceeding 0.3 nm/s are desirable.
► Deposition at 0.5 nm/s allows avoiding the excessive heating of photoresists.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 93, May 2012, Pages 91–94
نویسندگان
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