Influence of the deposition temperature on the properties of copper thin films prepared by alternating injection of Cu(ethylketoiminate)2 and H2 on a ruthenium substrate

The copper thin films were deposited by an alternating injection of Cu(ethylketoiminate)2 and H2, and the effects of substrate temperature on the atomic layer deposition and the properties of the deposited thin film were investigated. Continuous films with a small sheet resistance were obtained at a deposition temperature of 140 °C. The sheet resistance and the surface roughness increased with increasing deposition temperature due to the agglomeration of copper. The growth rate at 140 °C was 0.12 nm/cycle, with a copper precursor exposure greater than 1.0 × 107 L and H2 exposure greater than 3.0 × 108 L.