کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544451 | 1450392 | 2012 | 4 صفحه PDF | دانلود رایگان |
Effects of HF & H2SO4 pretreatment conditions on the interfacial bonding strength of Cu–Cu direct bonds were systematically investigated. The evaluated interfacial adhesion energies for 3 μm-thick Cu bonding layers were 0.58, 0.46, and 4.90 J/m2 for different HF & H2SO4 pretreatment times of 0, 15, and 30 s, respectively, with bonding temperature of 350 °C, which is ascribed to the effective removal of native surface oxide at optimum wet cleaning conditions before Cu–Cu bonding.
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► Effects of HF & H2SO4 pretreatment on the bonding toughness of Cu–Cu bonds were investigated.
► The interfacial adhesion energies for Cu bonding layers were 0.58 to 4.90 J/m2 each condition.
► This result shows that the effective removal of native surface oxide at optimum wet cleaning conditions before Cu-Cu bonds.
Journal: Microelectronic Engineering - Volume 89, January 2012, Pages 42–45