کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544469 | 1450392 | 2012 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Ab initio study of boron segregation and deactivation at Si/SiO2 interface
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
We perform first-principles density functional calculations to investigate the stability of various B-related defects near Si/SiO2 interface, and propose a mechanism for boron segregation to the interface. In Si, a substitutional B is energetically very stable and does not diffuse into the oxide in the absence of Si self-interstitials. Under nonequilibrium conditions, where self-interstitials are abundant, B dopants diffuse via the formation of a defect pair which consists of a B dopant and a self-interstitial. It is found that diffusing B dopants further segregate toward the oxide near the interface in form of positively charged interstitials, resulting in the suppression of activated dopants.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 89, January 2012, Pages 120–123
Journal: Microelectronic Engineering - Volume 89, January 2012, Pages 120–123
نویسندگان
Young Jun Oh, Jin-Heui Hwang, Hyeon-Kyun Noh, Junhyeok Bang, Byungki Ryu, K.J. Chang,