کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544498 871766 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Development of metal etch mask by single layer lift-off for silicon nitride photonic crystals
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Development of metal etch mask by single layer lift-off for silicon nitride photonic crystals
چکیده انگلیسی

We present a method for fabrication of nanoscale patterns in silicon nitride (SiN) using a hard chrome mask formed by metal liftoff with a negative ebeam resists (maN-2401). This approach enables fabrication of a robust etch mask without the need for exposing large areas of the sample by electron beam lithography. We demonstrate the ability to pattern structures in SiN with feature sizes as small as 50 nm. The fabricated structures exhibit straight sidewalls, excellent etch uniformity, and enable patterning of nanostructures with very high aspect ratios. We use this technique to fabricate two-dimensional photonic crystals in a SiN membrane. The photonic crystals are characterized and shown to have quality factors as high as 1460.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 6, June 2011, Pages 994–998
نویسندگان
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