کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544536 | 871770 | 2011 | 5 صفحه PDF | دانلود رایگان |
We investigated the phase formation and texture of nickel silicides formed during the reaction of 10 nm sputter deposited nickel with Si1−xCx epitaxial layers on Si(1 0 0) substrates, having a carbon content between 0 and 2.5 atomic percent. It was found that both the formation temperature as well as the texture of the metal-rich phases is influenced by the amount of carbon in the Si1−xCx layer. To determine the influence of the location of the carbon during the silicidation process we also investigated the reaction of 10 nm nickel on Si(1 0 0) substrates, where carbon was either alloyed in the nickel layer or deposited as an interlayer at the interface between the nickel and the substrate. Depending on the location of the carbon, a different thermal stability of the layer was found.
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 536–540