کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544540 871770 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Influence of different SiC surface treatments performed prior to Ni ohmic contacts formation
چکیده انگلیسی

This work is dealing with the influence of surface treatment on ohmic contacts to hexagonal N-type SiC with medium doping level. The contact materials were Ni and Ni2Si. The structures had to be annealed at high temperatures in order to reach ohmic behavior. A number of surface treatment methods were tested: wet cleaning, plasma etching, intentional oxidation with etching, H2 annealing and their combinations. After some types of cleaning, the SiC surface was immediately analysed using the XPS method. The results of the analyses showed that the composition of the surface was not much influenced by these treatments. At lower annealing temperatures (approx. up to 850 °C) the prepared contacts showed Schottky behavior with large scatter of parameters. After annealing at approx. 960 °C, where the onset of ohmic behavior is expected, the structures were truly ohmic and of good parameters. Cleaning methods had just a negligible influence on the electrical parameters of the ohmic contacts. An explanation for these observed facts is suggested: Although – already on the basis of the XPS results – we could speak about a negligible influence of the cleaning onto the contact parameters, there might come across also other mechanisms coming from interaction of contact materials with SiC, which caused similar behavior of ohmic contacts on differently treated surfaces.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 553–556
نویسندگان
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