کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544547 | 871770 | 2011 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characterization of high-K/metal gate using picosecond ultrasonics
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Transition from oxide gates to replacement metal gates is well underway and performance benefits have been demonstrated in state-of-the-art microprocessors. High-K/metal gate combination is important for all emerging new applications that require high-performance and low gate-leakage including all silicon and non-silicon nanoelectronic transistors. Picosecond ultrasonic measurements are used as checkpoints during various stages of development and integration of high-K/metal gate. The small spot, non-destructive nature of this technology allows for measurements directly on product wafers and on various line array structures in small measurement sites (30 μm Ã 30 μm). The technique has shown excellent correlation with cross-section TEM, demonstrating capability for monitoring advanced gate stacks. Picosecond ultrasonics provides high-throughput and can be used for in-line monitoring after the process is transferred to high volume manufacturing.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 583-588
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 583-588
نویسندگان
D.B. Hsieh, T.C. Tsai, S.F. Huang, Y.R. Yang, C.L. Yang, J.Y. Wu, J. Dai, J. Chen, J. Tan, P. Mukundhan,