کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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544549 | 871770 | 2011 | 4 صفحه PDF | دانلود رایگان |
Bismuth–telluride-based materials have excellent room-temperature thermoelectric properties. In this study, the composition of Bi–Te thin films deposited by RF-magnetron sputtering was systematically varied across a single wafer. X-ray diffraction, field emission-scanning electron microscopy (FE-SEM, JEOL, JSM-7000F) and energy dispersive X-ray spectroscopy (EDS) were then used to investigate the thermoelectric properties of the Bi–Te films as a function of the Te fraction. The Te content of the films ranged from 38% to 81%, and their microstructure and crystal structure varied depending on the Te content. The Seebeck coefficients of the Bi–Te thin films were in the range −10 to 153 μV/K, and the maximum power factor of the films was 3.7 × 10−4 W/K2 m, without post annealing.
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 593–596