کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544556 | 871770 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
In situ ellipsometry of porous low-dielectric constant films in supercritical carbon dioxide
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
This paper reports the results of in situ ellipsometric measurements on porous low-dielectric constant thin films being placed in a mixture of supercritical CO2 and an organic solvent, intending the detection of the pores. Different low-k films having a dielectric constant of 2.2–3.1 were examined at pressures of 10–14 MPa and temperatures of 40–100 °C. Large changes in ellipsometric parameters were observed upon the addition of the solvent, in any condition studied, when spin-on-dielectric films that have micropores were used. Measurement conditions for films with a smaller pore size were explored and the detection of supermicropores in plasma-enhanced chemical-vapor-deposited SiOCH was succeeded.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 623–626
Journal: Microelectronic Engineering - Volume 88, Issue 5, May 2011, Pages 623–626
نویسندگان
Eiichi Kondoh, Shosaku Aruga,