Barrier and seed repair performance of thin RuTa films for Cu interconnects

Thin (<4 nm) Physical Vapor Deposited (PVD) Ru-10 at.% Ta films were evaluated as diffusion barriers and seed enhancement layers for Cu metallization in sub 25 nm trenches. The ratio of Ru/Ta on blanket wafers could be influenced by changing the process conditions. However, a difference in Ru/Ta ratio did not influence the thermal stability of the layers during High Temperature X-ray Diffraction (HT-XRD) measurements as all RuTa films exhibited good thermal properties since no Cu-silicide formation was observed for temperatures below 500 °C. The RuTa films also passed an 85 °C/85% relative humidity (RH) test of one week of storage in order to test the H2O barrier integrity of the films. Furthermore no difference was found when testing the O2 barrier integrity during 300 s anneals at various temperatures between 250 °C and 500 °C. Good Cu fill of 20 nm trenches (AR 4:1) patterned in oxide was achieved when combining the RuTa films with PVD Cu seed layers with thicknesses ranging from 7 to 20 nm and Cu plating. When compared to a Ta(N)/Ta barrier, relatively high electrical yields (60–80%) were obtained for structures with CDs <30 nm when combining RuTa films with PVD Cu seed layers as thin as 7 nm (on field), hence evidencing the seed enhancement ability of these layers.