کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544646 871776 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron density of states at Ge/oxide interfaces due to GeOxGeOx formation
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Electron density of states at Ge/oxide interfaces due to GeOxGeOx formation
چکیده انگلیسی

An atomistic model of substoichiometric germanium oxide is generated through ab initio   molecular dynamics. The resulting structure shows a predominance of threefold coordinated Ge and O atoms. We also generate substoichiometric models through bond-switching Monte-Carlo simulations, which preserve the fourfold Ge and the twofold O coordinations. These differing structures are energetically competitive. Alignment of their electron densities of states to that of GeO2GeO2 reveals that the band-gap reduction is similar for both structures, mainly occurring through a shift of the valence band edge.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 4, April 2011, Pages 391–394
نویسندگان
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