کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544661 871776 2011 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Diffusion and doping issues in germanium
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Diffusion and doping issues in germanium
چکیده انگلیسی

This paper gives a review on self- and dopant diffusion in germanium (Ge) under thermal equilibrium and irradiation conditions and specifies the underlying mechanisms of diffusion and the point defects involved. Diffusion in Ge under thermal equilibrium conditions is mainly controlled by vacancies. However, Ge interstitials mediate the diffusion under concurrent annealing and irradiation. This is verified by the diffusion behavior of self-atoms, boron, phosphorus and arsenic under proton irradiation. The diffusion under irradiation is explained with the property of the Ge surface that is proposed to be an insufficient sink for Ge interstitials. As a consequence, a supersaturation of self-interstitials is established during irradiation, whereas the vacancy concentration is kept at thermal equilibrium. This explains that under irradiation the diffusion of self- and dopant atoms via self-interstitials becomes visible that is otherwise negligible under conventional annealing conditions. Our findings demonstrate ways to switch between vacancy and self-interstitial mediated diffusion and shows new strategies in the diffusion doping of Ge for technological applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 4, April 2011, Pages 452–457
نویسندگان
, , ,