کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544751 | 871782 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
A novel field effect transistor with dielectric polymer gel
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
A novel organic-field effect transistor (OFET) has been fabricated. This device is original in the sense that it can be produced in ambient conditions with facile and cost-effective methods. Experimental results surprisingly revealed a high mobility value at the order of 0.38 cm2/Vs, and the gate voltage is also found to be lower than 1 V. The device exhibited excellent transistor characteristics at low voltages. Threshold voltage is around 0.26 V with 103 on/off ratio. The device design is based on high effective capacitance value of a polymer gel, 1 μF, which is sandwiched between glass substrates on which source and drain electrodes were constructed.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 17–20
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 17–20
نویسندگان
Arif Kösemen, Sait Eren San, Mustafa Okutan, Zekeriya Doğruyol, Ahmet Demir, Yusuf Yerli, Büşra Şengez, Engin Başaran, Faruk Yılmaz,