کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544753 | 871782 | 2011 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
VLSI MOSFETs lifetime reduction caused by impedance mismatch
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this letter, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines upon device reliability has been studied. The signal waveforms corrupted by the impedance mismatch, experimentally measured at the far-end of the transmission line (45 nm CMOS technology test chip), have been taken as a basis for calculations of Age parameters from the Berkeley reliability tools model. The results reveal that the impedance mismatch accelerates the device degradation due to time-dependent dielectric breakdown, negative bias temperature instability and hot carrier injection wearout mechanisms. Therefore, the impedance mismatch should be regarded also as a reliability issue.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 28–31
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 28–31
نویسندگان
Pavel Livshits, Moshe Gurfinkel, Yefim Fefer,