کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544753 871782 2011 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
VLSI MOSFETs lifetime reduction caused by impedance mismatch
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
VLSI MOSFETs lifetime reduction caused by impedance mismatch
چکیده انگلیسی

In this letter, the impact of impedance mismatch between on-die CMOS drivers and driven transmission lines upon device reliability has been studied. The signal waveforms corrupted by the impedance mismatch, experimentally measured at the far-end of the transmission line (45 nm CMOS technology test chip), have been taken as a basis for calculations of Age parameters from the Berkeley reliability tools model. The results reveal that the impedance mismatch accelerates the device degradation due to time-dependent dielectric breakdown, negative bias temperature instability and hot carrier injection wearout mechanisms. Therefore, the impedance mismatch should be regarded also as a reliability issue.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 28–31
نویسندگان
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