کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544756 871782 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metal/semiconductor contact properties of Al/Co(II)complex compounds
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Metal/semiconductor contact properties of Al/Co(II)complex compounds
چکیده انگلیسی

A ligand(N-APTH) and Co(II)complex compound of bidentate ligand which contains a ring of the pyrimidine have been produced. For the optical transmission measurements of the Co(II)complex compound thin films, a UV–Visible (UV–Vis) spectrophotometer was employed. As a result of optical measurements, it was revealed that Co(II)complex compound tends to show a semiconductor characteristic with the bandgap value of 3.46 eV. An attempt has been made to explore the rectifying and ohmic properties of Al/Co(II)complex compound/Cu structures assuming that Co(II)complex compound may exhibit a rectifier or ohmic behavior, depending on the fabrication process, when brought into an appropriate contact with a metal. From current–voltage (I–V) measurements, it was found that the device could show good ohmic and rectifying properties intentionally depending on the experimental process followed during fabrication.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 41–45
نویسندگان
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