کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
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544767 | 871782 | 2011 | 4 صفحه PDF | دانلود رایگان |
Zinc oxide (ZnO) thin films were deposited onto a polycrystalline (poly) 3C-SiC buffer layer for surface acoustic wave (SAW) applications using a magnetron sputtering system. Atomic force microscopy (AFM) and X-ray diffraction (XRD) showed that the ZnO grown on 3C-SiC/Si had a smooth surface, a dominant c-axis orientation and a lower residual stress in ZnO thin film compared to that grown directly onto Si substrate. In order to evaluate the SAW characteristics of ZnO films on a 3C-SiC buffer layer, the two-port SAW resonators, based on inter-digital transducer (IDT)/ZnO/3C-SiC/Si and IDT/ZnO/Si structures, were fabricated and measured within a temperature range of 25–135 °C. The resulting 3C-SiC buffer layer improved the insertion loss by approximately 7.3 dB within the SAW resonator and enhanced the temperature stability with TCF = −22 ppm/°C up to 135 °C in comparison to that of TCF = −45 ppm/°C within a temperature range of 25–115 °C of the ZnO/Si structure.
Journal: Microelectronic Engineering - Volume 88, Issue 1, January 2011, Pages 105–108