The electrical characteristics of Al/p-InP Schottky contacts

In this study, it has been investigated the electrical characteristics of identically prepared Al/p-InP Schottky diodes. The barrier heights (BHs) and ideality factors of all devices have been calculated from the electrical characteristics. Although the diodes were all identically prepared, there was a diode-to-diode variation: the effective barrier heights ranged from 0.83 ± 0.01 to 0.87 ± 0.01 eV, and the ideality factors ranged from 1.13 ± 0.02 to 1.21 ± 0.02. The barrier height vs. ideality factor plot has been plotted for the devices. Lateral homogeneous BH was calculated as a value of 0.86 eV from the observed linear correlation between BH and ideality factor, which can be explained by laterally inhomogeneities of BHs. The values of barrier height and free carrier concentration yielded from the reverse bias capacitance–voltage (C–V) measurements ranged from 0.86 ± 0.04 to 1.00 ± 0.04 eV and from (3.47 ± 0.39) × 1017 to (4.90 ± 0.39) × 1017 cm−3, respectively. The mean barrier height and mean acceptor doping concentration from C–V characteristics have been calculated as 0.91 eV and 3.99 × 1017 cm−3, respectively.