کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544912 871794 2009 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Conformal electroless deposition of Cu seed layer on a 60-nm trench pattern modified with a self-assembled monolayer
چکیده انگلیسی

We have developed a novel activation technique for the conformal electroless deposition (ELD) of Cu on a SiO2 substrate modified with an organic self-assembled monolayer. The SiO2 substrate was modified with amine groups using 3-aminopropyltriethoxysilane and Au nanoparticles (AuNPs) to form a uniform, continuous catalyst for ELD. The Au catalytic layer formed on the amine-SiO2 substrate was stabilized by electrostatic interactions between the positively charged protonated-amine self-assembled monolayer (SAM) and negatively charged AuNPs. Cu films were then electrolessly deposited on Au-catalyzed SiO2 substrates. The Cu seed layer formed by this method showed a highly conformal and continuous structure. Cu electrodeposition on the 60-nm trench was demonstrated using an acid cupric sulfate electrolyte containing chloride, polyethylene glycol 4000 and bis(3-sulfopropyl)disulfide. The resulting electroplated Cu showed excellent filling capability and no voids or other defects were observed in a 60-nm trench pattern.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 374–378
نویسندگان
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