کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
544917 | 871794 | 2009 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches Effect of deposition conditions on charging processes in SiNx: Application to RF-MEMS capacitive switches](/preview/png/544917.png)
چکیده انگلیسی
The paper presents a systematic investigation of dielectric charging in low temperature silicon nitride for RF-MEMS capacitive switches. The dielectric charging is investigated with the aid of Metal-Insulator-Metal (MIM) capacitors with different thickness dielectric film and symmetric and asymmetric metal contacts. The experimental results demonstrate that the charging process is almost symmetric in low temperature deposited silicon nitride. Experiments performed in both MIM and MEMS reveal that the charging process is strongly affected by temperature. Specifically at high temperatures the charging rate increases exponentially with temperature.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 404–407
Journal: Microelectronic Engineering - Volume 86, Issue 3, March 2009, Pages 404–407
نویسندگان
Richard Daigler, Eleni Papandreou, Matroni Koutsoureli, George Papaioannou, John Papapolymerou,