کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545009 | 871799 | 2009 | 5 صفحه PDF | دانلود رایگان |
![عکس صفحه اول مقاله: Removal of post-etch photoresist and sidewall residues using organic solvent and additive combined with physical forces Removal of post-etch photoresist and sidewall residues using organic solvent and additive combined with physical forces](/preview/png/545009.png)
The effect of tetramethyl ammonium hydroxide (TMAH) used as additive in organic solvent (N-methyl pyrrolidone, NMP) on removal efficiency of post-etch photoresist was investigated on both blanket substrate and single damascene structures. In contrast to plasma ashing, photoresist removal using NMP/TMAH combined with megasonics showed no carbon depletion and no significant change in k-value. Mixing TMAH with NMP enhanced photoresist removal efficiency with respect to pure NMP. Photoresist removal using NMP/TMAH resulted in lower low-k capacitance (lower k-value) compared with that of plasma ashing process, due to the removal of the damaged layer generated during plasma etching. As a consequence of the removal of the damaged layer, a CD change was observed. The CD loss was estimated to be about 7 nm for 1% TMAH, and became negligible for 0.1% TMAH. Analysis of low-k sidewall using angle-resolved X-ray photoelectron spectroscopy showed that solvent mixture containing TMAH also removed sidewall residues generated by the etch plasma.
Journal: Microelectronic Engineering - Volume 86, Issue 2, February 2009, Pages 181–185