کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545012 871799 2009 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
In situ and real-time metrology during rinsing of micro- and nano-structures
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
In situ and real-time metrology during rinsing of micro- and nano-structures
چکیده انگلیسی

A new technology, called electro-chemical residue sensor (ECRS), has been developed for the in situ and real-time measurement of the residual impurities left on the wafer surface and in the fine structures of patterned wafers during typical rinse processes. The key components of this technology, which consist of the sensor hardware and a process model, are described. The testing results of the ECRS show that the residual impurity concentration is significantly different from what is typically provided by the bulk water resistivity, which is usually employed for determining the progress of the rinse. As a case study, the new metrology method has been applied to the removal of sulfate ions from patterned wafers; the importance of various surface interactions, charge effects, and transport processes is determined. Two examples of the use of the ECRS for the development of novel rinse recipes to reduce water usage are also discussed.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 86, Issue 2, February 2009, Pages 199–205
نویسندگان
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