کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545050 | 871804 | 2008 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices Characteristics of DC magnetron sputtered ternary cobalt–nickel silicide thin films for ultra shallow junction devices](/preview/png/545050.png)
چکیده انگلیسی
Ternary cobalt–nickel silicide thin films were synthesized by DC magnetron sputtering from an equiatomic cobalt–nickel alloy target. Grazing incidence XRD, Rutherford back scattering, high-resolution cross-sectional TEM analysis and electrical study were carried out to investigate the formation of silicide, stoichiometry, film thickness, depth profile and sheet resistance of as-deposited and post-deposition annealed films. The ternary silicide layer thickness was calculated from RBS simulated data, which was found to vary 20–43 nm for as-deposited and different vacuum annealed films. A minimum value of sheet resistance 2.73 Ω/sq corresponding to a resistivity of ∼8.4 μΩ-cm was obtained for optimized deposition and annealing conditions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 559–565
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 559–565
نویسندگان
D. Panda, A. Dhar, S.K. Ray,