کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545051 | 871804 | 2008 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET for ULSI
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
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چکیده انگلیسی
In this paper, a novel structure: Laterally amalgamated DUal Material GAte Concave (L-DUMGAC) MOSFET is proposed. The effectiveness of L-DUMGAC MOSFET design was examined by comparing Single Material Gate (SMG) Concave devices with L-DUMGAC devices of various gate length ratios, Negative Junction Depths (NJDs) and metal gate work functions, and it was found that L-DUMGAC exhibits significant enhancement in device characteristics in terms of device efficiency, intrinsic gain, early voltage and the switching characteristics. With the enhancement in device integration technology, the structure offers new opportunities for realizing high performance in the future ULSI production.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 566–576
Journal: Microelectronic Engineering - Volume 85, Issue 3, March 2008, Pages 566–576
نویسندگان
Rishu Chaujar, Ravneet Kaur, Manoj Saxena, Mridula Gupta, R.S. Gupta,