کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545121 871809 2007 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Mathematical modeling of CMP conditioning process
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Mathematical modeling of CMP conditioning process
چکیده انگلیسی

Up to now, the conditioning model with an oscillating conditioner wheel has not been studied. In this paper, kinematic analysis of the conditioning process and mathematical modeling of pad wear while the conditioner wheel oscillates is studied and the results show how the various parameters of the conditioning process influence the pad shape. The conditioning of the polishing pad is one of the most important processes associated with the CMP (Chemical Mechanical Polishing). As the wafer is polished, the surface of the pad can be deteriorated with a reduced polishing rate and reduced planarity due to wear and glazing of the pad. Thus, the polishing pad needs to be conditioned to maintain its effectiveness. In general, the conditioning process is used to regenerate the pad surface by breaking the glazed area of the pad and increase the MRR (Material Removal Rate) and give us longer pad life. However, as the conditioning process continues, the pad shape becomes more and more concave over the whole pad while the conditioner wheel oscillates (Y.Y. Zhou, E.C. Davis, Mat. Sci. Eng. B. 68 (1999), 91–98). It has been shown that the concavity of the polishing pad increases with conditioning time – longer conditioning induces a higher incidence of concavity of the polishing pad. Therefore, the conditioning process is related to the WIWNU (Within Wafer Non-Uniformity). Through this conditioning model, thickness variation of the polishing pad can be predicted.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 4, April 2007, Pages 577–583
نویسندگان
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