کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
545123 | 871809 | 2007 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The meta-stable dip (MSD) effect in SOI FinFETs
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی کامپیوتر
سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: The meta-stable dip (MSD) effect in SOI FinFETs The meta-stable dip (MSD) effect in SOI FinFETs](/preview/png/545123.png)
چکیده انگلیسی
The meta-stable dip (MSD) effect is demonstrated and characterized in SOI FinFETs. With ascending scan of front-gate voltage (VG1), the magnitude of drain current (ID) tends to be fixed within a specific region of the front-gate voltage and this leads to a dip of transconductance (gm). The dip width can be modulated through a control of bias condition or measurement speed such as back-gate voltage (VG2), drain voltage (VD) and step size of the front-gate voltage. From the dual-gate transient measurement, it is found that the MSD effect is highly dependent on the floating-body effect. In SOI FinFETs, the MSD effect is significantly affected by the fin width due to the fringing electric field of the lateral gates.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 84, Issue 4, April 2007, Pages 590–593
Journal: Microelectronic Engineering - Volume 84, Issue 4, April 2007, Pages 590–593
نویسندگان
Jang-Gn Yun, Maryline Bawedin, Sorin Cristoloveanu, Denis Flandre, Hi-Deok Lee,