کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
545273 871814 2006 9 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Experimental test chamber design for optics exposure testing and debris characterization of a xenon discharge produced plasma source for extreme ultraviolet lithography
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Experimental test chamber design for optics exposure testing and debris characterization of a xenon discharge produced plasma source for extreme ultraviolet lithography
چکیده انگلیسی

A commercial EUV light source is currently used in the MS-13 EUV Micro Exposure Tool (MET) produced by Exitech Ltd. The source uses a xenon z-pinch discharge to produce 13.5 nm light intended for use in extreme ultraviolet lithography (EUVL). During operation, an erosive flux of particles is ejected from the pinch plasma, contributing to limitations in the lifetime of nearby collector optics. A diagnostic chamber is presented that permits characterization of the debris fields present, exposure of optical samples, and evaluation of debris mitigation techniques. Available diagnostics include a Faraday cup, a spherical sector energy analyzer (ESA), and a EUV photodiode. This paper details the chamber design and initial results of source characterization. Faraday cup analysis shows that the maximum theoretical ion energy is 53 keV, ESA measurements show the presence of Xe+, Xe2+, Ar+, W+, and Mo+ ions, and microanalysis of exposed mirror samples is used to show the erosive effects of plasma exposure.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 83, Issue 3, March 2006, Pages 476–484
نویسندگان
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