کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458243 | 1516165 | 2017 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical conductivity tuning and valence band splitting studies in Copper Gallium Selenide thin films
ترجمه فارسی عنوان
تنظیم ولتاژ الکتریکی و مطالعات تقسیم بندی ولنتاین در فیلم های نازک سلنیوم مس
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
چکیده انگلیسی
Copper gallium selenide (CGS) semiconductor thin films are suitable for various optoelectronic devices due to their stoichiometry dependent properties. Tuning of electrical conductivity (0.5-90Â S/cm) by compositional variations of CGS thin films prepared by reactive evaporation of the three elements under vacuum is presented here. This p-type absorber material withstands its conductivity type over the entire range of compositional variation. The structure, morphology, elemental composition, chemical states, electrical and optical properties of the thin films are characterized using techniques like X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible absorption spectroscopy and Hall effect measurements. Optical studies of the films reveal a three-fold absorption from which crystal field splitting â¼0.06Â eV and spin orbit splitting â¼0.09-0.17Â eV are determined. The optical fundamental absorption edges of the films vary from 1.6 to 1.67Â eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 729, 30 December 2017, Pages 249-256
Journal: Journal of Alloys and Compounds - Volume 729, 30 December 2017, Pages 249-256
نویسندگان
Anitha Abraham, Keerthi K., Shaji S., Uday Deshpande, Rachel Reena Philip,