کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5458398 | 1516169 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Growth conditions of semi and non-polar GaN on Si with Er2O3 buffer layer
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فلزات و آلیاژها
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چکیده انگلیسی
The GaN was grown on Si(100) with Er2O3(110) buffer by metal organic chemical vapor deposition (MOCVD). The results showed the polycrystalline nature of the layers with dominant non-polar (11-20) and semi-polar (10-13) orientations. GaN was formed in a two step process regime: low temperature growth was followed by high temperature growth regime. At a low temperature GaN tends to crystalize with dominant non-polar (11-20) orientation, while high temperature leads to preferential semi-polar (10-13) orientation growth. Additionally, the effects of parameters such as growth temperature, V/III-ratio and type of carrier gases on structural, morphological and optical properties of GaN was discussed in the current work.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 739-743
Journal: Journal of Alloys and Compounds - Volume 725, 25 November 2017, Pages 739-743
نویسندگان
Tomas Grinys, Tomas Drunga, Kazimieras Badokas, Rytis Dargis, Andrew Clark, Tadas Malinauskas,