p-NiO/n+-Si single heterostructure for one diode-one resistor memory applications

One diode-one resistor (1D1R) memory is one of effective architectures to suppress the crosstalk interference of crossbar network. The conventional 1D1R device usually consists of a stack of sandwich-structure memory and pn junction diode. Herein, we demonstrated a 1D1R device based on a single-stacked p-NiO/n+-Si heterostructure, and its structure and fabrication process are greatly simplified compared with those of multilayer 1D1R devices. Studies on electrical transport properties reveal that the p-type NiO film not only serves as a resistive-switching layer, but also combines with n-type Si to form a pn heterojunction diode. Due to the existence of the built-in electric field, it can neutralize the applied external electric field and the nanoscale conducting filaments (CFs) are only confined to the outside of depletion region of NiO/Si pn junction. Thus, the formation of CFs does not degrade the diode quality, which allows the coexistence of resistive-switching and rectifying behaviors.