Large enhancement in cell performance of CdSe-sensitized ZnO solar cell via ZnSe overcoating

Charge recombination is an important factor that limits the cell efficiency of quantum dot sensitized solar cells (QDSSCs). Herein, we report a facile way to improve the cell performance of CdSe sensitized ZnO QDSSC by overcoating a thin layer of ZnSe on CdSe/ZnO film through a successive ionic layer adsorption and reaction (SILAR) procedure. Photovoltaic investigations indicate that ZnSe overcoating can increase photocurrent and photovoltage of the cell, resulting in significant enhancement of the cell efficiency, which is much better than the widely used traditional ZnS material. The superior role of ZnSe overcoating is ascribed to its large inhibition of charge recombination loss owing to its suitable band structure, efficient passivation of ZnO and CdSe QDs as well as its small lattice mismatch with CdSe that leads to the large decrease of surface/interface defects in CdSe/ZnO photoanode. This finding provides an alternative efficient way to enhance the cell performance of ZnO based QDSSC by suppressing the charge recombination.