کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5458809 1516167 2017 31 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Large memory window and tenacious data retention in (0001) ZnO:Cr ferroelectric memristive device prepared on (111) Pt layer
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
Large memory window and tenacious data retention in (0001) ZnO:Cr ferroelectric memristive device prepared on (111) Pt layer
چکیده انگلیسی
The high-performance ferroelectric memristive device was realized by fabricating a top-to-bottom metal-insulator-metal structure of Pt/ZnO:Cr/Pt by using a high-quality ferroelectric (000l) ZnO:Cr layer, which had been directly grown on the Pt layer having a preferential orientation normal to the (111) plane. The ZnO:Cr layer clearly showed a ferroelectric signature with high Curie temperature of ∼375 K. The ferroelectric memristive-device of Pt/ZnO:Cr/Pt revealed an asymmetric hysteresis behavior in positive- and negative-voltage regions when the higher electric-field was applied to the device. This could be attributed to the difference in polarization-dependent Schottky emission rates, arising from the ionic motion of oxygen vacancies. The device exhibited a large memory window (∼12.2 V), a high on/off ratio (>103), and a tenacious data retention. These suggest the present type of the device scheme to hold great promise for applications in next-generation ferroelectric memristive-switching devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 727, 15 December 2017, Pages 304-310
نویسندگان
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