Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 716, 5 September 2017, Pages 1-6

Gang He, Shanshan Jiang, Wendong Li, Changyong Zheng, Huaxin He, Jing Li, Zhaoqi Sun, Yanmei Liu, Mao Liu,